| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device capable of preventing bulge and vibration of a substrate generated in scanning and moving the substrate while preventing adhesion of dust to the substrate, in an ion implantation device for carrying out ion implantation to a large substrate of 1 to 2 m square. SOLUTION: This ion implantation device 10 and 10A are provided with: ion sources 11 and 11A for generating an ion beam B1; beam deflection mechanisms 12, 13 and 13A for changing the ion beam B1 into a ribbon-like ion beam B3; and substrate scan mechanisms 15 and 15A for moving the substrate 20 in a direction intersecting with the radiation direction of the ribbon-like ion beam B3. The substrate scan mechanisms 15 and 15A are so structured that the substrate 20 is tilted rearward at 5-30°from the vertical direction, and the back face of the substrate 20 is supported by support bodies 15b and 15Ab. COPYRIGHT: (C)2005,JPO&NCIPI
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