发明名称 |
Magnetic head of magnetoresistance effect type and process for production thereof |
摘要 |
In the case of magnetic head of magnetoresistance effect type whose breakdown voltage is as low as 0.3 V, it is impractical to ignore even a very small amount of static electricity that occurs during fabrication or use. In one embodiment, the desired magnetic head is produced by forming an SiO<SUB>2 </SUB>layer on a silicon slider, thereby forming an SOI substrate; forming on the SOI substrate circuits to protect a TMR element from overvoltage and a read-write circuit; forming field effect transistors from an Si semiconductor layer (formed by reduction of the SiO<SUB>2 </SUB>layer or epitaxial growth on the SiO<SUB>2 </SUB>layer); forming three electrodes (source, gate, drain) on the Si semiconductor layer; forming a Schottky diode by Schottky contact (metal) with the Si semiconductor layer; forming overvoltage protective circuits of aluminum wiring on the SOI substrate; and forming a TMR element.
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申请公布号 |
US2005141143(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040009773 |
申请日期 |
2004.12.10 |
申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS, B.V. |
发明人 |
ONO HIROYUKI;SUZUKI HIROAKI;SUNAGA TOSHIO;MIYATAKE HISATADA;ASANO HIDEO |
分类号 |
G11B5/39;G11B5/127;G11B5/33;G11B5/40;H01L43/08;(IPC1-7):G11B5/33 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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