发明名称 Kristalldiode, insbesondere Siliziumdiode mit scharf definierter Durchbruchsspannung in Sperrichtung
摘要 832,584. Semi-conductor devices. SIEMENS & HALSKE A.G. Jan. 1, 1958 [Jan. 4, 1957], No. 69/58. Class 37. A silicon or other crystal diode housed in a light-proof container, has its turnover voltage stabilized by utilizing the photo-electric effect produced by a spontaneously radiation emitting substance. Fig. 2 shows a N-type silicon -body 1 having alloy electrodes 2 and 3 with radio-active substance 5 adjacent the PN junction between electrode 3 and the body. Electrode 2 consists of a gold antimony coating, and electrode 3 of a pointed aluminium wire. The substance 5 may be a liminous or radio-active #-ray material. The sealed casing 4 may be opaque to the emission from the radio-active substance which may be associated with filters or stops.
申请公布号 CH366903(A) 申请公布日期 1963.01.31
申请号 CH19570054221 申请日期 1957.12.28
申请人 SIEMENS & HALSKE AKTIENGESELLSCHAFT 发明人 GAUDLITZ,ARTHUR,DR.
分类号 B23K35/24;H01L21/26;H01L21/263;H01L21/54;H01L23/16;H01L23/31;H01L29/00;H01L29/866;H01L31/107;H02H7/125 主分类号 B23K35/24
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