| 摘要 |
<p>Material gas (G) hits the outer peripheral surface (23b) of a dam member (23) and rides on the upper surface (23a) side, and then is allowed to flow along the main surface of a silicon single-crystal substrate (W) placed on a susceptor (12). An upper lining member (4) is disposed above the dam member (23) so as to face the dam member (23). A gas introducing clearance (60) is formed between the dam member (23) and the upper lining member (4). In a vapor growth device (1), the upper lining member (4) is regulated in size so that the length, formed in a direction along the horizontal reference line (HSL), of the gas introducing clearance (60) gradually decreases as it is away from the horizontal reference line (HSL) or is kept constant at any position. Accordingly, a vapor growth device capable of making more uniform the flowing route of a material gas flowing on the silicon single-crystal substrate, and a production method for an epitaxial wafer using it are provided.</p> |
