| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency switching transistor whose bias voltage is low, switching time is short, and which is capable of switching high power. SOLUTION: A high-frequency switching transistor 100 is provided with a collector region 104 having a first conductivity type, a first barrier region 108 having a second conductivity type, different from the first conductivity type, a semiconductor region 114 having a dopant concentration lower than that in the first barrier region 108, a second barrier region 120 having the first conductivity type, a base region 122 having the second conductivity type, a third barrier region 128 having the second conductivity type and having a dopant concentration higher than that in the semiconductor region 114, and an emitter region 130 having the first conductivity type. COPYRIGHT: (C)2005,JPO&NCIPI
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