| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor devices capable of suppressing adverse effect on element characteristics and forming an extension region wherein a joining depth is comparatively shallow. SOLUTION: A liner insulation film 18 covers a side circumferential wall of a gate electrode 17a and the end of a gate insulation film to suppress damages to the gate insulation film and a semiconductor substrate caused in the manufacturing process, and a source and drain region 20 is formed and thereafter the extension region 21 is formed to make the joining depth of the extension region 21 comparatively shallow. COPYRIGHT: (C)2005,JPO&NCIPI
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