SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the avalanche resistance of a vertical semiconductor device equipped with a main current element and a current detection element. SOLUTION: A p+-type region 16s of high impurity concentration is formed at the periphery of an n+-type source region 103 in the p--type base region 102 of a unit cell 13 at the endmost part of the main current element 12. A p+type region 16d is formed at the periphery of the n+-type source region 103 of a unit cell 15 at the endmost part of the current detection element 14. Parasitic npn transistors formed of the n+-type source regions 103, the p+-type regions 16s (16d), the p--type base regions 102 and the n--type drift region 101 are formed in the unit cells 13 and 15. The base resistance of the parasitic npn transistor becomes smaller than a conventional one due to the existence of the p+-type regions 16s (16d). COPYRIGHT: (C)2005,JPO&NCIPI