| 摘要 |
A test pattern ( 100, 200, 300, 400, 600, 700 ) has a first metal structure ( 102 ) disposed on a substrate ( 352 ), one or more intermediate layers ( 358 ) disposed above the first metal structure ( 102 ) and a second metal structure ( 104 ) disposed above the one or more intermediate layers ( 352 ). A first via ( 106 ) passes through the intermediate layers ( 352 ) and connects the first metal structure ( 102 ) to the second metal structure ( 104 ). One or more third metal structures ( 108 ) are disposed above the one or more intermediate layers ( 352 ) and the first metal structure ( 102 ). One or more second vias ( 110 ) pass through the intermediate layers ( 352 ) and connect the first metal structure ( 102 ) to the third metal structures ( 108 ). The second vias ( 110 ) are located outside of a radius (R) from a center of the first via ( 106 ). The third metal structures ( 110 ) are separated from the second metal structure ( 104 ) by a dielectric material ( 366 ).
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