METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE THEREFORE,申请号KR20030097141-传众专利搜索

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发明名称	METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE THEREFORE
摘要
申请公布号	KR20050065968(A)	申请公布日期	2005.06.30
申请号	KR20030097141	申请日期	2003.12.26
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	PARK, JE MIN;SHIN, DONG WON;HWANG, YOO SANG
分类号	H01L21/768;H01L21/8242;H01L27/06;H01L27/108;(IPC1-7):H01L21/824	主分类号	H01L21/768
代理机构		代理人
主权项
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