发明名称 PHOTORESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a photoresist composition which improves the shape of a resist pattern, that is, rectangularity and film thickness reduction while retaining resolution. <P>SOLUTION: The photoresist composition contains (A) a polymer component including an alkali-soluble constitutional unit having an alicyclic group having both (i) a fluorine atom or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, and having alkali solubility changed by the action of an acid; and at least one sulfonium compound represented by formula (1) [where X represents a 2-6C alkylene group having a fluorine atom substituted for at least one hydrogen atom; and R<SP>1</SP>-R<SP>3</SP>each independently represents an aryl or alkyl group with the proviso that at least one of R<SP>1</SP>-R<SP>3</SP>represents aryl] as an acid generator component (B) which generates an acid upon exposure. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005172949(A) 申请公布日期 2005.06.30
申请号 JP20030409500 申请日期 2003.12.08
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TSUJI HIROMITSU;ENDO KOUTARO
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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