| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a copolymer for use in semiconductor lithography suitable for a coating membrane-forming composition such as a resist membrane-forming composition that is used for a fine pattern formation in making semiconductors, and the copolymer obtained by using the method, having excellent storage stability, no high molecular polymer, and remarkably less defects in a resist pattern when used for the semiconductor lithography. <P>SOLUTION: In this method, the copolymer for use in the semiconductor lithography is manufactured by radical polymerization of two or more monomers having an ethylenic double bond under existence of a polymerization initiator in a polymerization solvent. This radical polymerization is performed in the solvent containing both the monomers and a polymerization inhibiter of ≥20 mol ppm or oxygen of ≥400 mol ppm as a polymerization inhibiting component. Thus, the copolymer for use in the semiconductor lithography is provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
