| 摘要 |
PROBLEM TO BE SOLVED: To produce a high-density tungsten target at a low temperature and in a simple step, substantially without being limited by the properties of a tungsten raw powder to be used, and thereby to provide a method for inexpensively and stably manufacturing the tungsten target. SOLUTION: The method for manufacturing the tungsten target for sputtering comprises using a tungsten powder having an average particle diameter d of 10μm or smaller, and such a particle size distribution that 80% or more particles are included in the range of the average particle diameter d±0.5d; and when pressure-sintering the tungsten powder at 1,400°C or higher with a pressure of 100 kg/cm<SP>2</SP>or higher, fluctuating a pressure in the range of±10 to 50 kg/cm<SP>2</SP>and with 10 minutes/cycle or shorter. COPYRIGHT: (C)2005,JPO&NCIPI
|
