| 发明名称 |
Method for manufacturing semiconductor device |
| 摘要 |
The present invention discloses a method for manufacturing semiconductor device wherein a cleaning process of a buffer layer is performed prior to a formation of a nitride film. The cleaning process allows to maintain the deposition thickness of the nitride film even when the time between the formation of the buffer layer and the formation of the nitride film is long.
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| 申请公布号 |
US2005142893(A1) |
申请公布日期 |
2005.06.30 |
| 申请号 |
US20040876489 |
申请日期 |
2004.06.28 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE MIN Y.;PARK DONG S. |
| 分类号 |
H01L21/336;H01L21/306;H01L21/314;H01L21/318;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/336 |
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