| 发明名称 |
Method for manufacturing semiconductor device |
| 摘要 |
The present invention discloses a method for manufacturing a semiconductor device which forms a thick gate oxide film in a high voltage region and a thin tunnel oxide film in a cell region. The method for manufacturing the semiconductor device reduces a process time and improves uniformity of the gate oxide film in the high voltage region, by growing the gate oxide film in the high voltage region at a thickness of about 400 Å, and removing a residual nitride film in the cell region by performing an etching process using a BOE solution and an etching process using H<SUB>3</SUB>PO<SUB>4 </SUB>for 120 seconds and 12 minutes, respectively.
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| 申请公布号 |
US2005142764(A1) |
申请公布日期 |
2005.06.30 |
| 申请号 |
US20040878173 |
申请日期 |
2004.06.28 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK SANG W.;LEE SEUNG C. |
| 分类号 |
H01L21/316;H01L21/28;H01L21/31;H01L21/314;H01L21/336;H01L21/8234;H01L21/8247;H01L27/088;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/316 |
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