| 摘要 |
Disclosed is a method for forming a gate in a semiconductor device. The method includes the steps of: sequentially forming a gate insulation layer and an inter- layer insulation layer on a substrate; patterning the inter- layer insulation layer into a predetermined configuration, thereby forming a patterned inter-layer insulation layer; forming a nitride layer on the patterned inter-layer insulation layer; simultaneously etching the nitride layer and the substrate, thereby obtaining a spacer on sidewalls of the patterned inter-layer insulation layer and a trench having a predetermined depth in the substrate; forming a conductive layer on the trench; and planarizing the conductive layer, thereby forming the gate.
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