High leakage current trench capacitor cells detecting method for use in dynamic RAM, involves comparing measure of leakage current of capacitor cells to recognize those cells having high leakage current

摘要

The method involves directing an electron beam (3) toward an area (8) having trench capacitor cells (4) so that secondary electrons from the capacitor cells are emitted. A measure of leakage current of the capacitor cells are determined based on the quantity of the secondary electrons. The measure of leakage current of the capacitor cells are compared to recognize those cells having high leakage current. An independent claim is also included for a device for detecting trench capacitor cells having high leakage current on a substrate disk.