发明名称 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition which reduces LER and is excellent in resolution and a resist pattern forming method using the resist composition. <P>SOLUTION: The positive resist composition contains (A) a copolymer including a constitutional unit (a1) derived from a (meth)acrylic ester containing a polycyclic-group-containing acid-dissociable dissolution inhibiting group, a constitutional unit (a2) derived from a (meth)acrylic ester containing a lactone-containing monocyclic or polycyclic group, a constitutional unit (a3) derived from a (meth)acrylic ester containing a hydroxyl-containing polycyclic group, and a constitutional unit (a4) derived from a (meth)acrylic ester containing a polycyclic-group-containing non-acid-dissociable dissolution inhibiting group, other than the constitutional units (a2) and (a3), as a resin component whose alkali solubility is increased by the action of an acid; and (B) at least one sulfonium compound represented by formula (b-1) or (b-2) as an acid generator component which generates an acid upon exposure. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005173468(A) 申请公布日期 2005.06.30
申请号 JP20030416584 申请日期 2003.12.15
申请人 TOKYO OHKA KOGYO CO LTD 发明人 HANEDA HIDEO;TAKESHITA MASARU;HAYASHI RYOTARO;MATSUMARU SHOGO
分类号 C08F220/18;G03F7/004;G03F7/033;G03F7/039;H01L21/027 主分类号 C08F220/18
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