发明名称 Laser mask and method of crystallization using the same
摘要 A laser mask and method of crystallization using the same that can produce a polycrystalline silicon thin film having uniform crystallization characteristics. According to the present invention, a method of crystallization using a laser mask having a reference pattern in a first block and the reverse pattern of the reference pattern in a second block includes providing a substrate having a silicon thin film; positioning the first block of the laser mask over a portion of the silicon film and irradiating a first laser beam through the first block; and moving either the laser mask or the substrate to position the second block of the laser mask over the portion of the silicon film and irradiating a second laser beam through the second block.
申请公布号 US2005142452(A1) 申请公布日期 2005.06.30
申请号 US20040010670 申请日期 2004.12.14
申请人 YOU JAESUNG 发明人 YOU JAESUNG
分类号 H01L27/08;G02F1/136;G03F7/20;G03F9/00;H01L21/00;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):G03F9/00 主分类号 H01L27/08
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