发明名称 |
Laser mask and method of crystallization using the same |
摘要 |
A laser mask and method of crystallization using the same that can produce a polycrystalline silicon thin film having uniform crystallization characteristics. According to the present invention, a method of crystallization using a laser mask having a reference pattern in a first block and the reverse pattern of the reference pattern in a second block includes providing a substrate having a silicon thin film; positioning the first block of the laser mask over a portion of the silicon film and irradiating a first laser beam through the first block; and moving either the laser mask or the substrate to position the second block of the laser mask over the portion of the silicon film and irradiating a second laser beam through the second block.
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申请公布号 |
US2005142452(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040010670 |
申请日期 |
2004.12.14 |
申请人 |
YOU JAESUNG |
发明人 |
YOU JAESUNG |
分类号 |
H01L27/08;G02F1/136;G03F7/20;G03F9/00;H01L21/00;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):G03F9/00 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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