Method for manufacturing a power device with insulated gate and trench-gate structure having controlled channel length and corresponding device

摘要

A method for manufacturing a semiconductor power device with an insulated gate and trench-gate structure integrated on a semiconductor substrate includes providing a body region in the semiconductor substrate, forming a surface source region on the body region, etching the semiconductor substrate and forming a trench to form the trench-gate structure. The method also includes forming a deep portion of the source region along the trench.