| 摘要 |
A method of manufacturing a semiconductor device includes: forming a transistor with first and second ends 3 a and 3 b of a main current path, and a control electrode 5 , covering the transistor with a first insulating film 6 , forming first through third openings that expose the first and second ends 3 a and 3 b and the control electrode 5 , and burying or filling first to third conductive materials 7 a- 7 c in the first to third openings respectively, forming the ferroelectric capacitor by laminating the first electrode 8 , the ferroelectric film 9 , and the second electrode 10 , laminating the second insulating film 11 and the moisture diffusion protective film 12 , forming the fourth opening 13 c to expose the third conductive material 7 c through the second insulating film 11 and the moisture diffusion protective film 12 , and forming a first wiring layer 14 c, which has electrical connection with the control electrode 5.
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