| 摘要 |
The present invention provides a semiconductor device that permits free setting of characteristics of individual semiconductor elements which are mixedly mounted and have different characteristics, and is free of steps between formed semiconductor elements, and a manufacturing method for the same. In the semiconductor device, an n-type silicon layer is deposited on a p-type silicon substrate by epitaxial growth, and then an SOI layer is deposited thereon through the intermediary of a BOX layer. A junction transistor using a part of the n-type silicon layer as a channel region and a MOS transistor using the SOI layer are produced. The semiconductor device ensures uniform resist, control of contact depths, wire processability, etc., making the semiconductor device ideally suited for microminiaturization.
|
