VAPOR GROWTH DEVICE AND PORDUCTION METHOD FOR EPITAXIAL WAFER

摘要

A vapor growth device (1) which is constituted as a single-wafer type and has a gas introducing port (21) through which a material gas (G) is led into a reaction vessel (2). A dam member (23) is disposed around a susceptor (12), and the material gas (G) from the gas introducing port (21) hits the outer peripheral surface (23b) of the dam member (23) and rides on an upper surface (23a) side, and then is allowed to flow along the main surface of a silicon single-crystal substrate (W) placed on the susceptor (12). Guide plates (40R, 40L, 41R, 41L) for dividing the flow in the width direction (WL) of the material gas (G) are disposed on the upper surface (23a) of the dam member (23). Accordingly, a vapor growth device capable of controlling the flow route of material gas flowing on a silicon single-crystal substrate, and a production method for an epitaxial wafer using it are provided.