METHOD FOR FORMING GATE-OXIDES OF SEMICONDUCTOR DEVICES,申请号KR20030097453-传众专利搜索

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发明名称	METHOD FOR FORMING GATE-OXIDES OF SEMICONDUCTOR DEVICES
摘要
申请公布号	KR20050066201(A)	申请公布日期	2005.06.30
申请号	KR20030097453	申请日期	2003.12.26
申请人	HYNIX SEMICONDUCTOR INC.	发明人	CHOI, YONG SOO
分类号	H01L21/336;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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