| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask structure for electron-beam lithography with which no strain nor breakage occurs in an SiC thin-film arranged on a holding frame of the mask structure, and which possesses highly precise planar parallelism. <P>SOLUTION: The mask structure for electron-beam lithography is manufactured by point-bonding the holding frame and a reinforcing member of the mask structure by heat-treating the both in an atmosphere of vacuum, inert gas, or reducing gas, at a temperature higher than the melting temperature of the solder by 100°C or more, under a condition of loading 10 g/cm<SP>2</SP>on the contact plane between the holding frame and the reinforcing member of the mask structure. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
