| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To narrow the distribution width of threshold voltage after write while suppressing the increase of write time. <P>SOLUTION: This device is provided with: a nonvolatile, electrically rewritable semiconductor memory cell; and a write circuit for writing data in the memory cell which performs write in the memory cell by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell thereby changing the write state of the memory cell, changes the supply state of the write control voltage VBL to reduce the changing speed of the write state, further changes the supply state of the write control voltage VBL to control the reduced changing speed of the write state, and finishes write into the memory cell while the changing speed of the write state is being reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
