发明名称 DRY ETCHING APPARATUS, ELECTROOPTICAL DEVICE MANUFACTURING APPARATUS, AND ELECTROOPTICAL DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a dry etching apparatus capable of safely and reliably removing an etching reaction product remaining within a chamber after an etching work. SOLUTION: An etching processing gas is introduced into a chamber 10 through a first path 15 to dry-etching-process an object to be etched. During the dry-etching treatment, a gas such as a reaction product is exhausted from an exhausting means 21. After the dry-etching treatment, a reaction gas is introduced into the chamber 10 through a second path 16. Since the first path 15 for introducing the etching processing gas, and the second path 16 for introducing the reaction gas during cleaning communicate with an internal path 16a in the chamber 10, cleaning is performed while the reaction gas passes through the same path as that through which the etching processing gas passes, thus making it possible to reliably remove the reaction products or the like in the chamber 10 after the etching treatment. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005175364(A) 申请公布日期 2005.06.30
申请号 JP20030416427 申请日期 2003.12.15
申请人 SEIKO EPSON CORP 发明人 MISU HITOSHI
分类号 C23F4/00;H01L21/3065;(IPC1-7):H01L21/306 主分类号 C23F4/00
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