发明名称 SEMICONDUCTOR PROTECTOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor protector having a filtering function, where the filter property and crosstalks among channels have been improved. SOLUTION: This semiconductor protector (57) consists of plural zener diodes (79 and 81, 80 and 82) and one passive component (77). In each of the zener diodes, the second conductive coatings (81, 82) are formed on the surface of the first conductive coatings (79, 80), the cathode electrodes (60, 61) and anode electrodes (68, 69) are provided, the cathode electrodes and anode electrodes are mounted on the surface of the semiconductor substrate, the cathode electrodes are connected to the passive component (77) and the anode electrodes (68, 69) are grounded separately. The anodes of each zener diode will not share the inside of a semiconductor chip as a connection channel, unlike the conventional anodes, and are separately connected to the ground and reduce the common impedance characteristics. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005175397(A) 申请公布日期 2005.06.30
申请号 JP20030417025 申请日期 2003.12.15
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TSUJI MASATAKA
分类号 H01L21/822;H01L27/04;(IPC1-7):H01L21/822 主分类号 H01L21/822
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