| 摘要 |
PROBLEM TO BE SOLVED: To provide a power super junction MOSFET(metal oxide semiconductor field effect transistor) which has a sufficient SEB(single event burn out) resistivity to use in space. SOLUTION: A parallel PN layer 22c composed of an N type additional area 3, an N drift area 22a, and a P partition area 22b is formed on an N<SP>+</SP>drain layer 21. A P base area 23, an N<SP>+</SP>source area 24, a gate electrode 26, and a source electrode 27 are formed on the parallel PN layer 22c, and a drain electrode 28 is on the back of the substrate. When the thickness of the parallel PN layer 22c is d1, the thickness of the additional area 3 is d2, and the withstand voltage of the device is V, d1 +d2 shall be larger than X(μm) meeting at least V=7.34X-0.023X<SP>2</SP>+9.23×10<SP>-4</SP>X<SP>3</SP>. The d2 shall be≥1/4 of d1, the mean impurity concentration of the additional area shall be≥2 times of the parallel PN layer and≤3×10<SP>17</SP>/cm<SP>3</SP>. Then, The positive feedback between the latch up of the parasitic npn transistor and the dynamic avalanche near the substrate becomes hard to occur to elevate the SEB resistivity. COPYRIGHT: (C)2005,JPO&NCIPI
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