SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor integrated circuit device capable of preventing the excessive application of a voltage to a ferroelectric capacitor. SOLUTION: This semiconductor integrated circuit device is provided with a memory cell array MCA including a memory cell having a ferroelectric capacitor as a memory element having first and second electrodes. A first bit line BL is electrically connected to the first electrode. A first potential generation circuit 1 supplies first potential to the second electrode to apply a voltage lowered at a first change rate accompanying a temperature increase. A sense amplifier 2 amplifies a potential difference between the first bit line and a second bit line/BL complementary to the first bit line. COPYRIGHT: (C)2005,JPO&NCIPI