发明名称 |
Charged particle beam apparatus, charged particle detection method, and method of manufacturing semiconductor device |
摘要 |
A charged particle beam apparatus includes: a charged particle beam source which generates a charged particle beam to irradiate the charged particle beam onto a specimen; a demagnification optical system which demagnifies the charged particle beam; a deflector which deflects the charged particle beam to scan the specimen; and a first charged particle detector having a detection surface to detect a charged particle generated from the specimen which has been irradiated with the charged particle beam; wherein the detection surface of the first charged particle detector is disposed so as to face towards the charged particle beam source.
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申请公布号 |
US2005139789(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040969856 |
申请日期 |
2004.10.22 |
申请人 |
NAGANO OSAMU;ANDO ATSUSHI |
发明人 |
NAGANO OSAMU;ANDO ATSUSHI |
分类号 |
G01N23/225;G21K5/04;H01J37/08;H01J37/20;H01J37/244;H01J37/305;H01L21/027;H01L21/66;(IPC1-7):H01J37/08 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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