发明名称 Charged particle beam apparatus, charged particle detection method, and method of manufacturing semiconductor device
摘要 A charged particle beam apparatus includes: a charged particle beam source which generates a charged particle beam to irradiate the charged particle beam onto a specimen; a demagnification optical system which demagnifies the charged particle beam; a deflector which deflects the charged particle beam to scan the specimen; and a first charged particle detector having a detection surface to detect a charged particle generated from the specimen which has been irradiated with the charged particle beam; wherein the detection surface of the first charged particle detector is disposed so as to face towards the charged particle beam source.
申请公布号 US2005139789(A1) 申请公布日期 2005.06.30
申请号 US20040969856 申请日期 2004.10.22
申请人 NAGANO OSAMU;ANDO ATSUSHI 发明人 NAGANO OSAMU;ANDO ATSUSHI
分类号 G01N23/225;G21K5/04;H01J37/08;H01J37/20;H01J37/244;H01J37/305;H01L21/027;H01L21/66;(IPC1-7):H01J37/08 主分类号 G01N23/225
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