发明名称 |
Photodetector for low light power levels has monolithically integrated transimpedance amplifier, evaluation electronics, connections between photocell, electronic circuit parts parallel to chip normal and/or perpendicular to chip plane |
摘要 |
<p>The device has an integral photocell part (20) associated with one chip side (R), preferably on which light is incident, an electronic circuit part (30) on the opposite side (V) of the chip and electrical connections (41a,41b) between the photocell and electronic circuit parts extending in a direction parallel to a chip normal and/or extending in a direction perpendicular to the chip plane. An independent claim is also included for a method of manufacturing an inventive device.</p> |
申请公布号 |
DE10357135(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
DE2003157135 |
申请日期 |
2003.12.06 |
申请人 |
X-FAB SEMICONDUCTOR FOUNDRIES AG;MELEXIS GMBH |
发明人 |
BACH, KONRAD;STAHL, KARL-ULRICH;ECKOLDT, UWE;EINBRODT, WOLFGANG;HOELKE, ALEXANDER |
分类号 |
H01L27/144;H01L31/02;H01L31/0224;H01L31/10;(IPC1-7):H01L27/144 |
主分类号 |
H01L27/144 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|