发明名称 Photodetector for low light power levels has monolithically integrated transimpedance amplifier, evaluation electronics, connections between photocell, electronic circuit parts parallel to chip normal and/or perpendicular to chip plane
摘要 <p>The device has an integral photocell part (20) associated with one chip side (R), preferably on which light is incident, an electronic circuit part (30) on the opposite side (V) of the chip and electrical connections (41a,41b) between the photocell and electronic circuit parts extending in a direction parallel to a chip normal and/or extending in a direction perpendicular to the chip plane. An independent claim is also included for a method of manufacturing an inventive device.</p>
申请公布号 DE10357135(A1) 申请公布日期 2005.06.30
申请号 DE2003157135 申请日期 2003.12.06
申请人 X-FAB SEMICONDUCTOR FOUNDRIES AG;MELEXIS GMBH 发明人 BACH, KONRAD;STAHL, KARL-ULRICH;ECKOLDT, UWE;EINBRODT, WOLFGANG;HOELKE, ALEXANDER
分类号 H01L27/144;H01L31/02;H01L31/0224;H01L31/10;(IPC1-7):H01L27/144 主分类号 H01L27/144
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