摘要 |
PROBLEM TO BE SOLVED: To keep performance of transistor array by making a superposition area between gate and drain changeless in connection with amount of alignment deflection between gate and drain masks on the assumption that exposing process is not changed, furthermore, forming process of the transistor array is not restricted. SOLUTION: A thin film transistor comprises at least one characteristic among the following items: primarily, whole transistors locate outside gate wires connecting each transistor in such a way that gate electrodes project outside the gate wires; secondarily, a projection of semiconductor layer on a substrate completely locates inside a projection of gate on the substrate; thirdly, the drain straddles the gate sideways, and a projection of superposition portion between the drain and the gate on a base completely locates inside the projection of the gate on the substrate; and fourth, each distance between the gate wire, the gate, a source and the drain respectively is adjusted so that variations of gate-drain capacitance and gate-source capacitance may not be clearly influenced by alignment deflection. COPYRIGHT: (C)2005,JPO&NCIPI
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