| 摘要 |
PROBLEM TO BE SOLVED: To elongate the crystal growth distance by single irradiation with a laser beam, and to improve the characteristics of a semiconductor element while enhancing production efficiency and lowering production cost. SOLUTION: The process for producing a semiconductor film utilizing a laser beam comprises a step for forming a semiconductor film on a substrate, a step for forming a thermal diffusion layer having thermal conductivity higher than that of the substrate on the semiconductor film, a patterning step for separating a region where the thermal diffusion layer is formed from a region where the thermal diffusion layer is not formed by removing a part of the thermal diffusion layer, a first laser irradiation step for irradiating the region where the thermal diffusion layer is formed with a first laser beam to fuse the semiconductor film, and a step for crystallizing the fused semiconductor. COPYRIGHT: (C)2005,JPO&NCIPI
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