| 摘要 |
PROBLEM TO BE SOLVED: To make a gate insulation film hard to be damaged when a semiconductor device is manufactured even if an antenna ratio of wiring connected to a gate electrode is high. SOLUTION: In a method of manufacturing the semiconductor device, an element isolation film 2 having an element region 2a and an opening 2b for electric discharge is formed on a semiconductor substrate 1, and the gate insulation film 3 is formed on the part of the element region 2a. The gate electrode 4 is formed on the gate insulation film 3, and gate ground wiring 4a extended from the gate electrode 4 to the opening 2b for the electric discharge via the element isolation film 2 is formed. An interlayer insulation film 6 is formed on the gate electrode 4, and a connection hole 6a disposed on the gate electrode 4 is formed on the interlayer insulation film 6. Wiring 10a connected to the gate electrode 4 by embedding the part in the connection hole 6a is formed on the interlayer insulation film 6. The gate ground wiring 4a is cut on the element isolation film 2. COPYRIGHT: (C)2005,JPO&NCIPI
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