| 摘要 |
The present invention relates to a method for forming an inductor being a passive device in RE MEMS, RFCMOS, Bipolor/SiGe, BiCMOS semiconductor devices. According to the present method, a lower photoresist layer, an intermediate anti-exposure layer and an upper photoresist layer are sequentially formed on a substrate having a lower electrode. The upper photoresist layer is patterned by means of an exposure and development process using a first mask. The exposed intermediate anti-exposure layer is etched until the lower photoresist layer is sufficiently exposed, thus forming a partial via hole. The lower photoresist layer exposed through the upper photoresist layer and the partial via hole are patterned by means of an exposure and development process using a second mask, thus forming a damascene pattern having trenches and a via hole. The damascene pattern is filled with a conductive material layer to form a copper inductor. Not only a thickness of the trenches being line portions and a thickness of the via hole being a contact portion can be uniformly controlled, but also their height can be easily controlled. A high Q inductor can be thus manufactured.
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