| 摘要 |
The present invention provides a semiconductor device and fabricating method thereof, by which capacitance is enhanced by increasing an effective area of a lower electrode of a capacitor. The present invention includes a first lower electrode on a semiconductor substrate to have a plate shape, a second lower electrode on the first electrode to have a [<img id="custom-character-00001" he="2.46mm" wi="3.56mm" file="US20050142732A1-20050630-P00900.TIF" alt="custom character" img-content="character" img-format="tif"/>] type (or "wing"-type) cross-section, a dielectric layer covering surfaces of the first and second lower electrodes, and an upper electrode on the dielectric layer.
|
