发明名称 |
Strained dislocation-free channels for CMOS and method of manufacture |
摘要 |
A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. An SiGe layer is grown in the channel of the nFET channel and a Si:C layer is grown in the pFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component in an overlying grown epitaxial layer. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel. In a further implementation, the SiGe layer is grown in both the nFET and pFET channels. In this implementation, the stress level in the pFET channel should be greater than approximately 3 GPa.
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申请公布号 |
US2005139930(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20050061445 |
申请日期 |
2005.02.22 |
申请人 |
CHIDAMBARRAO DURESETI;DOKUMACI OMER H. |
发明人 |
CHIDAMBARRAO DURESETI;DOKUMACI OMER H. |
分类号 |
H01L;H01L21/00;H01L21/8238;H01L21/84;H01L27/12;H01L29/04;H01L31/036;H01R4/64;(IPC1-7):H01L29/04;H01L21/823 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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