发明名称 |
Memory devices having sharp-tipped phase change layer patterns and methods of forming the same |
摘要 |
Phase change Random Access Memory (PRAM) devices include a substrate and a phase change layer pattern on the substrate. The phase change layer pattern includes a sharp tip and at least one wall that extends from the sharp tip in a direction away from the substrate. At least one contact hole node is provided that contacts the phase change material pattern adjacent the sharp tip.
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申请公布号 |
US2005139816(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040018643 |
申请日期 |
2004.12.21 |
申请人 |
JEONG WON-CHEOL;KIM HYEONG-JUN;PARK JAE-HYUN;JEONG CHANG-WOOK |
发明人 |
JEONG WON-CHEOL;KIM HYEONG-JUN;PARK JAE-HYUN;JEONG CHANG-WOOK |
分类号 |
H01L27/10;H01L45/00;(IPC1-7):H01L29/02 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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