| 摘要 |
PROBLEM TO BE SOLVED: To enable a silicide layer with uniform film thickness and film quality to be formed on a source-drain region, restrain junction leak in a MOS structure low and ensure good electrical connection between the silicide layer and metallic wiring. SOLUTION: In the manufacturing method of the semiconductor device of a MOS structure having a silicide layer in the upper part of the source-drain region, after As atom of 2.5×10<SP>13</SP>cm<SP>-2</SP>or more and 5×10<SP>14</SP>cm<SP>-2</SP>or less is subjected to chemical absorption in the surface of the source-drain region 121 wherein the silicide layer is to be formed, a metallic film is deposited on the source-drain region and then the metallic film is turned to silicide by heat treatment. COPYRIGHT: (C)2005,JPO&NCIPI |
