METHOD FOR MANUFACTURING MESA SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a mesa semiconductor device at a low cost by reducing exposure steps in forming an isolating glass protection film of the device. SOLUTION: The method for manufacturing a mesa semiconductor device comprises steps of forming an n++-type semiconductor region 12 on the front side surface of an n--type semiconductor wafer 11; forming a p-type semiconductor region 13 by selectively diffusing a p-type impurity thereinto; forming an insulating film 14 on the semiconductor wafer 11; forming an opening 15 for electrode formation, and at the same time an opening 17 for isolated formation on part of a pn junction formed at an interface between the n++type semiconductor region 12 and the p-type semiconductor region 13, where the junction interface reaches the surface of the semiconductor wafer 11; forming an isolation groove 18 to isolate the pn junction; and forming a glass protective film 19b so as to cover the surface of the isolation groove where the pn junction is exposed by selectively drawing and filling photo-sensitive glass paste 19a into the isolation groove 18 and then subjecting the resultant structure to heat treatment. COPYRIGHT: (C)2005,JPO&NCIPI