| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device in which wiring material in a via is prevented from being sucked by stress, stress being applied to the via is relaxed, generation of a void is suppressed, and a yield of multilayer wiring is enhanced. SOLUTION: The semiconductor device comprises a first layer on which a lower layer wiring 1 is formed, a second layer on which an upper layer wiring 6 is formed, and a third layer sandwiched by the first and second layers. A via 9 connected with the upper layer wiring 6 but not connected with the lower layer wiring 1 and extending up to the first layer is formed in the third layer. COPYRIGHT: (C)2005,JPO&NCIPI
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