SEMICONDUCTOR DEVICE AND LEVEL-SHIFT CIRCUIT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To solve the problem of on-state voltage resistance reduction due to charges going out of balance in an on-state semiconductor device drift region wherein a first conductivity type semiconductor region and a second conductivity type semiconductor region are adjacent to each other and stretch in parallel with each other. SOLUTION: A p-type top region 62 and an n-type drift layer 24 are adjacent to each other and stretch in parallel with each other, with holes drifting in the top region 62 and electrons drifting in the drift layer 24. COPYRIGHT: (C)2005,JPO&NCIPI