| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory cell using a magnetostatic coupling. SOLUTION: The magnetic random-access memory cell 1 has a structure in which a free layer 2, a non-magnetic layer 3 (a main non-magnetic layer) in the cell and a pin layer 4 are laminated. The free layer 2 is composed of two ferromagnetic layers having the different magnitudes of uniaxial magnetic anisotropies Ku, a soft magnetic layer 5 and a hard magnetic layer 7, and a non-magnetic layer 6 isolating the layers 5 and 7. The two ferromagnetic layers, the layer 5 and the layer 7 are magnetostatic-coupled through the layer 6. COPYRIGHT: (C)2005,JPO&NCIPI
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