发明名称 CHARGE TRANSFER DEVICE AND ITS FABRICATING PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a technology for simplifying the fabrication process of a charge transfer device. SOLUTION: The charge transfer device 100 comprises a semiconductor substrate (not shown), a photoelectric conversion element (not shown) provided on the semiconductor substrate, and a charge transfer passage 120 provided on the semiconductor substrate and transferring charges generated in the photoelectric conversion element. The charge transfer passage 120 is shaped such that a wide part 120a and a narrow part 120b having different width in the in-plane direction of the semiconductor substrate are provided alternately along the charge transfer direction. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005174965(A) 申请公布日期 2005.06.30
申请号 JP20030408276 申请日期 2003.12.05
申请人 NEC KYUSHU LTD 发明人 TAJIMA KAZUHISA
分类号 H01L27/148;H01L21/339;H01L29/762;(IPC1-7):H01L27/148 主分类号 H01L27/148
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