| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal by which the range of values of V/G (V is pulling speed, and G is temperature gradient) resulting an N region (no defect region) can be drastically and surely expanded, that is, when the single crystal of the N region is especially pulled, the production margin can be drastically expanded, and thereby, the production yield and the productivity of the crystal of the N region and/or an I region, especially, the crystal of the N region can be significantly improved. SOLUTION: In the method for manufacturing the silicon single crystal by a Czochralski method, the single crystal in which the whole surface of the crystal is the N region and/or I region is grown by doping boron and carbon so that the total concentration of the dopants in the crystal becomes within a range of≥1×10<SP>17</SP>atoms/cc when the single crystal is grown. COPYRIGHT: (C)2005,JPO&NCIPI
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