发明名称 |
Method for forming a contact in semiconductor device |
摘要 |
A method for forming a contact hole in a semiconductor device is disclosed. The method for forming a contact hole in a semiconductor device comprises depositing a nitride layer and an ILD on a substrate including predetermined devices; forming a first photoresist pattern on the ILD and making a via hole by using the first photoresist pattern; performing a first ashing process; forming a second photoresist pattern on the ILD and making a trench using the second photoresist pattern; conducting a PET; performing a second ashing process and etching the predetermined portion of the nitride layer exposed through the via hole; and wet-cleaning the resulting structure. Accordingly, the present disclosure can fabricate a contact hole maximizing the characteristics of a semiconductor device just by performing a Post Etching Treatment after a trench is formed.
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申请公布号 |
US2005142886(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040026288 |
申请日期 |
2004.12.30 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
LEE KANG H.;LEE DATE G.;KIM KEE H. |
分类号 |
H01L21/28;H01L21/302;H01L21/306;H01L21/311;H01L21/461;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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