发明名称 |
Method of manufacturing semiconductor device |
摘要 |
Provided is a method of manufacturing a semiconductor device capable of forming a thin high-quality gate oxide layer by suppressing occurrence of recoiled oxygen due to ion implanting. The method of manufacturing a semiconductor device includes steps of: removing an oxide layer from a semiconductor substrate; forming a well region in the substrate by performing a first ion implanting process; removing a native oxide layer from the substrate; adjusting a threshold voltage by performing a second ion implanting process on the substrate; and forming a gate oxide layer on the substrate.
|
申请公布号 |
US2005142772(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040023844 |
申请日期 |
2004.12.27 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
KIM HAK-DONG |
分类号 |
H01L21/28;H01L29/10;(IPC1-7):H01L21/824;H01L21/336;H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|