SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent the variation of the electric characteristic of the silicon substrate of a wafer-level CSP which is caused by its light irradiation performed from its exposed portion to the external.

SOLUTION: In the semiconductor device, a light shadowing film 26 is formed on the rear and side surfaces of a silicon substrate 11 whereon its second insulation layer 21 is not formed. Thereby, a semiconductor element formed in the silicon substrate 11 is so shielded as to shadow any light from the semiconductor element.

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