发明名称 PHOTORESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a photoresist composition which suppresses line edge roughness and residue on development while retaining high resolution. <P>SOLUTION: The photoresist composition contains (A) a polymer component including an alkali-soluble constitutional unit having an alicyclic group having both (i) a fluorine atom or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, and having alkali solubility changed by the action of an acid; and (B) an acid generator component which generates an acid when it receives exposure light, and contains at least (B-1) an onium salt having C<SP>-</SP>(SO<SB>2</SB>C<SB>n</SB>F<SB>2n+1</SB>)<SB>3</SB>(n is an integer of 1-5) as an anion moiety. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005173464(A) 申请公布日期 2005.06.30
申请号 JP20030416560 申请日期 2003.12.15
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TSUJI HIROMITSU;ENDO KOUTARO
分类号 G03F7/004;G03F7/033;G03F7/039;H01L21/027 主分类号 G03F7/004
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