STACKING STRUCTURE AND SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a stacking structure of insulating films which excels in adhesion between neighboring insulating films without markedly increasing effective dielectric constants while suppressing leakage current in a semiconductor device having the stacking structure of insulating films containing at least silicon. SOLUTION: The stacking structure of the films is formed, in which a first transition layer in a first insulating film and a second transition layer in a second insulating film are formed interposing the contact interface between the first insulating film and the second insulating film by irradiating the stacking structure of the insulating films having mutually different compositions or composition ratios and containing at least silicon with ultraviolet rays under an atmosphere containing oxygen. COPYRIGHT: (C)2005,JPO&NCIPI